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ME2N7002E

N-Channel MOSFET

ME2N7002E Features

* 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V

* 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design APPLICATIONS

* High density cell design for low RDS(O

ME2N7002E General Description

The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requi.

ME2N7002E Datasheet (601.52 KB)

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Preview of ME2N7002E PDF

Datasheet Details

Part number:

ME2N7002E

Manufacturer:

Matsuki

File Size:

601.52 KB

Description:

N-channel mosfet.

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ME2N7002E N-Channel MOSFET Matsuki

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