ME2N7002E Datasheet (Matsuki)

ME2N7002E, N-Channel MOSFET

The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requi

ME2N7002E Features

* 60V / 0.50A , RDS(ON)= 5.0Ω@VGS=10V

* 60V / 0.30A , RDS(ON)= 5.5Ω@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design APPLICATIONS

* High density cell design for low RDS(O