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ME2N7002E-G - N-Channel MOSFET

Matsuki

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Datasheet Details

Part number	ME2N7002E-G
Manufacturer	Matsuki
File Size	961.19 KB
Description	N-Channel MOSFET
Datasheet	ME2N7002E-G-Matsuki.pdf

ME2N7002E-G Product details

Description

The ME2N7002E-G is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

Features

ϥʳ 60V / 0.50A , RDS(ON)= 5.0ȍ@VGS=10V ϥʳ 60V / 0.30A , RDS(ON)= 5.5ȍ@VGS=4.5V ϥʳ Super high density cell design for extremely low RDS (ON) ϥʳ Exceptional on-resistance and maximum DC current capability ϥʳ SOT-23 package design.

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Published: Mar 20, 2018 |