ME2N7002W Datasheet (Matsuki)

ME2N7002W, N-Channel MOSFET

The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

ME2N7002W Features

* Simple Drive Requirement

* Small Package Outline

* ROHS Compliant Mechanical data

* High density cell design for low RDS(ON)

* Voltage controlled small signal switching.

* Rugged and reliable.

* High saturation current capability.

* High-speed switching.

* Not t