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ME3466-G Datasheet - Matsuki

N-Channel 150V (D-S) MOSFET

ME3466-G Features

* FEATURES

* RDS(ON)≦375mΩ@ VGS =10V

* RDS(ON)≦400mΩ@ VGS= 6V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Disp

ME3466-G General Description

The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular p.

ME3466-G Datasheet (875.18 KB)

Preview of ME3466-G PDF

Datasheet Details

Part number:

ME3466-G

Manufacturer:

Matsuki

File Size:

875.18 KB

Description:

N-channel 150v (d-s) mosfet.

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ME3466-G N-Channel 150V D-S MOSFET Matsuki

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