Datasheet Details
Part number:
ME4410B-G
Manufacturer:
Matsuki
File Size:
1.03 MB
Description:
N-Channel 30-V (D-S) MOSFET
Features
* RDS(ON) ≦ 18 mΩ@VGS=10V
* RDS(ON) ≦ 30 mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* D
ME4410B-G, N-Channel 30-V (D-S) MOSFET
The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME4410B-G Distributor
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