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ME4410B-G

N-Channel 30-V (D-S) MOSFET

ME4410B-G Features

* RDS(ON) ≦ 18 mΩ@VGS=10V

* RDS(ON) ≦ 30 mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* D

ME4410B-G General Description

The ME4410B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME4410B-G Datasheet (1.03 MB)

Preview of ME4410B-G PDF

Datasheet Details

Part number:

ME4410B-G

Manufacturer:

Matsuki

File Size:

1.03 MB

Description:

N-channel 30-v (d-s) mosfet.

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TAGS

ME4410B-G N-Channel 30-V D-S MOSFET Matsuki

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