ME4412 Datasheet (Matsuki) - N-Channel 30-V (D-S) MOSFET

ME4412, N-Channel 30-V (D-S) MOSFET

The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME4412 Features

* RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load SwitchC LCD Display inverter e