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ME4412-G, ME4412 Datasheet - Matsuki

ME4412-G N-Channel 30-V (D-S) MOSFET

The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME4412-G Features

* RDS(ON) 18 mΩ@VGS=10V RDS(ON) 30 mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load SwitchC LCD Display inverter e

ME4412-Matsuki.pdf

This datasheet PDF includes multiple part numbers: ME4412-G, ME4412. Please refer to the document for exact specifications by model.
ME4412-G Datasheet Preview Page 2 ME4412-G Datasheet Preview Page 3

Datasheet Details

Part number:

ME4412-G, ME4412

Manufacturer:

Matsuki

File Size:

741.20 KB

Description:

N-channel 30-v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME4412-G, ME4412.
Please refer to the document for exact specifications by model.

ME4412-G Distributor

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ME4412-G ME4412 N-Channel 30-V D-S MOSFET Matsuki