Datasheet Details
Part number:
ME4565A-G, ME4565A
Manufacturer:
Matsuki
File Size:
1.03 MB
Description:
N- & p-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME4565A-G, ME4565A.
Please refer to the document for exact specifications by model.
ME4565A-G, ME4565A, N- & P-Channel MOSFET
The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application
ME4565A-G Features
* RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Batt
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