Datasheet4U Logo Datasheet4U.com

ME4565A-G

N- & P-Channel MOSFET

ME4565A-G Features

* RDS(ON) 26.5mΩ@VGS=10V (N-Ch) RDS(ON) 45mΩ@VGS=4.5V (N-Ch) RDS(ON) 44mΩ@VGS=-10V (P-Ch) RDS(ON) 60mΩ@VGS=-4.5V(P-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Batt

ME4565A-G General Description

The ME4565A is the N and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application .

ME4565A-G Datasheet (1.03 MB)

Preview of ME4565A-G PDF

Datasheet Details

Part number:

ME4565A-G

Manufacturer:

Matsuki

File Size:

1.03 MB

Description:

N- & p-channel mosfet.

📁 Related Datasheet

ME4565A N- & P-Channel MOSFET (Matsuki)

ME4565AD4 N- & P-Channel MOSFET (Matsuki)

ME4565AD4-G N- & P-Channel MOSFET (Matsuki)

ME4565 N- and P-Channel 40-VPowerMOSFET (LITE-ON)

ME4566 N- & P-Channel MOSFET (Matsuki)

ME4566-G N- & P-Channel MOSFET (Matsuki)

ME4542 N- and P-Channel MOSFET (Matsuki)

ME4542-G N- and P-Channel MOSFET (Matsuki)

ME4542D N- & P-Channel MOSFET (Matsuki)

ME4542D-G N- & P-Channel MOSFET (Matsuki)

TAGS

ME4565A-G P-Channel MOSFET Matsuki

Image Gallery

ME4565A-G Datasheet Preview Page 2 ME4565A-G Datasheet Preview Page 3

ME4565A-G Distributor