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ME4942-G

Dual N-Channel MOSFET

ME4942-G Features

* RDS(ON)≦20mΩ@VGS=10V

* RDS(ON)≦29mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* DC/DC C

ME4942-G General Description

The ME4942 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME4942-G Datasheet (1.01 MB)

Preview of ME4942-G PDF

Datasheet Details

Part number:

ME4942-G

Manufacturer:

Matsuki

File Size:

1.01 MB

Description:

Dual n-channel mosfet.

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TAGS

ME4942-G Dual N-Channel MOSFET Matsuki

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