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ME4954-G

Dual N-Channel MOSFET

ME4954-G Features

* RDS(ON)≦80mΩ@VGS=10V

* RDS(ON)≦98mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter

ME4954-G General Description

The ME4954 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application suc.

ME4954-G Datasheet (872.49 KB)

Preview of ME4954-G PDF

Datasheet Details

Part number:

ME4954-G

Manufacturer:

Matsuki

File Size:

872.49 KB

Description:

Dual n-channel mosfet.

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TAGS

ME4954-G Dual N-Channel MOSFET Matsuki

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