Datasheet4U Logo Datasheet4U.com

ME55N06-G, ME55N06 Datasheet - Matsuki

ME55N06-Matsuki.pdf

This datasheet PDF includes multiple part numbers: ME55N06-G, ME55N06. Please refer to the document for exact specifications by model.
ME55N06-G Datasheet Preview Page 2 ME55N06-G Datasheet Preview Page 3

Datasheet Details

Part number:

ME55N06-G, ME55N06

Manufacturer:

Matsuki

File Size:

1.02 MB

Description:

N-channel 60-v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME55N06-G, ME55N06.
Please refer to the document for exact specifications by model.

ME55N06-G, ME55N06, N-Channel 60-V (D-S) MOSFET

The ME55N06 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

These devices are particularly suited for low voltage application such as cellular ph

ME55N06-G Features

* RDS(ON)≦9.5mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter PIN CONFIGURATION (TO-252

📁 Related Datasheet

📌 All Tags

Matsuki ME55N06-G-like datasheet