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ME55N06-G

N-Channel 60-V (D-S) MOSFET

ME55N06-G Features

* RDS(ON)≦9.5mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter PIN CONFIGURATION (TO-252

ME55N06-G General Description

The ME55N06 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular ph.

ME55N06-G Datasheet (1.02 MB)

Preview of ME55N06-G PDF

Datasheet Details

Part number:

ME55N06-G

Manufacturer:

Matsuki

File Size:

1.02 MB

Description:

N-channel 60-v (d-s) mosfet.

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TAGS

ME55N06-G N-Channel 60-V D-S MOSFET Matsuki

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