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ME55N06-G, ME55N06 N-Channel 60-V (D-S) MOSFET

ME55N06-G Description

N-Channel 60-V (D-S) MOSFET ME55N06/ ME55N06-G GENERAL .
The ME55N06 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

ME55N06-G Features

* RDS(ON)≦9.5mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME55N06-G Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME55N06 (Pb-free) ME55N06-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Paramete

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME55N06-G, ME55N06. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME55N06-G, ME55N06
Manufacturer
Matsuki
File Size
1.02 MB
Datasheet
ME55N06-Matsuki.pdf
Description
N-Channel 60-V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME55N06-G, ME55N06.
Please refer to the document for exact specifications by model.

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N-Channel 60-V D-S MOSFET Matsuki
Matsuki ME55N06-G-like datasheet