ME55N06A Datasheet (Matsuki) - N-Channel 75-V (D-S) MOSFET

ME55N06A, N-Channel 75-V (D-S) MOSFET

The ME55N06A is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on state resistance.

These devices are particularly suited for low voltage application such as cellular p

ME55N06A Features

* RDS(ON)≦9.5mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter PIN CONFIGURATION (TO-252