ME6970 Datasheet (Matsuki) - Dual N-Channel MOSFET

ME6970, Dual N-Channel MOSFET

The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as ce

ME6970 Features

* RDS(ON)≦21mΩ@VGS=10V

* RDS(ON)≦24mΩ@ VGS=4.5V

* RDS(ON)≦32mΩ@ VGS=2.5V

* RDS(ON)≦50mΩ@ VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Po