ME6970 Datasheet - Matsuki

ME6970 Dual N-Channel MOSFET

The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as ce.

ME6970 Features

* RDS(ON)≦21mΩ@VGS=10V

* RDS(ON)≦24mΩ@ VGS=4.5V

* RDS(ON)≦32mΩ@ VGS=2.5V

* RDS(ON)≦50mΩ@ VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Po

ME6970 Datasheet (1.09 MB)

ME6970 Datasheet Preview — Preview of ME6970 PDF

Datasheet Details

Part number:

ME6970

Manufacturer:

Matsuki

File Size:

1.09 MB

Description:

Dual n-channel mosfet.

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ME6970 Dual N-Channel MOSFET Matsuki

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