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ME6970-G, ME6970 Dual N-Channel MOSFET

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Description

Dual N-Channel 20-V (D-S) MOSFET GENERAL .
The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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This datasheet PDF includes multiple part numbers: ME6970-G, ME6970. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
ME6970-G, ME6970
Manufacturer
Matsuki
File Size
1.09 MB
Datasheet
ME6970-Matsuki.pdf
Description
Dual N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME6970-G, ME6970.
Please refer to the document for exact specifications by model.

Features

* RDS(ON)≦21mΩ@VGS=10V
* RDS(ON)≦24mΩ@ VGS=4.5V
* RDS(ON)≦32mΩ@ VGS=2.5V
* RDS(ON)≦50mΩ@ VGS=1.8V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC e Ordering Infor

ME6970-G Distributors

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