Datasheet Details
Part number:
ME6970-G, ME6970
Manufacturer:
Matsuki
File Size:
1.09 MB
Description:
Dual n-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME6970-G, ME6970.
Please refer to the document for exact specifications by model.
ME6970-G, ME6970, Dual N-Channel MOSFET
The ME6970 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as ce
ME6970-G Features
* RDS(ON)≦21mΩ@VGS=10V
* RDS(ON)≦24mΩ@ VGS=4.5V
* RDS(ON)≦32mΩ@ VGS=2.5V
* RDS(ON)≦50mΩ@ VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Po
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