ME6972 Datasheet (Matsuki) - Dual N-Channel MOSFET

ME6972, Dual N-Channel MOSFET

The ME6972 Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as ce

ME6972 Features

* RDS(ON)≦26mΩ@VGS=4.5V

* RDS(ON)≦36mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load S