ME7835S-G Datasheet (Matsuki)

ME7835S-G, P-Channel MOSFET

The ME7835S P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellul

ME7835S-G Features

* RDS(ON) ≦18mΩ@VGS=-10V

* RDS(ON) ≦36mΩ@VGS=-4.5V APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC e Ordering Information: ME7835S-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherw