ME7837S-G Datasheet (Matsuki)

ME7837S-G, P-Channel MOSFET

The ME7837S P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellul

ME7837S-G Features

* RDS(ON) ≦19.5mΩ@VGS=-10V

* RDS(ON) ≦40mΩ@VGS=-4.5V APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC e Ordering Information: ME7837S-G (Green product-Halogen free) Absolute Maximum Ratings (Tj=25℃ Unless Othe