ME95N10T-G Datasheet, Mosfet, Matsuki

ME95N10T-G Features

• Mosfet
• RDS(ON)≦8.5mΩ@VGS=10V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability PIN CONFIGURATI

PDF File Details

Part number:

ME95N10T-G

Manufacturer:

Matsuki

File Size:

901.02kb

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📄 Datasheet

Description:

N-channel mosfet. The ME95N10T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

TAGS

ME95N10T-G

Matsuki

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