* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior avalanche ruggedness
* RoHS compliant Be
MSC035SMA170B4 Datasheet (6.50 MB)
MSC035SMA170B4
6.50 MB
N-channel mosfet.
1700V, 35 mΩ N-Channel mSiC™ MOSFET
MSC035SMA170B4
Product Overview
1700V, 35 mΩ typical at 20 VGS, 41 mΩ typical at 18 VGS, Silicon Carbide (SiC) N-C.
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