MSCSM120AM042T6LIAG Datasheet - Microchip

MSCSM120AM042T6LIAG SiC MOSFET

MSCSM120AM042T6LIAG Very Low Stray Inductance Phase Leg SiC MOSFET Power Module : Product Overview : The MSCSM120AM042T6LIAG device is a very low stray inductance phase leg 1200V, 495A silicon carbide (SiC) MOSFET power module. Note: All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004631A-page 1 MSCSM12.

MSCSM120AM042T6LIAG Features

* The following are key features of the MSCSM120AM042T6LIAG device:

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

* M2.5 signals connectors

* Very low stray inductance

* M4 and M5 power connectors

* Internal thermistor for tempe

MSCSM120AM042T6LIAG-Microchip.pdf