MSCSM120HM50T3AG Datasheet (Microchip)

MSCSM120HM50T3AG, SiC MOSFET

MSCSM120HM50T3AG Full Bridge SiC MOSFET Power Module Product Overview The MSCSM120HM50T3AG device is a full bridge 1200V, 55A silicon carbide (SiC) power module.

: Notes: All multiple inputs and outputs must be shorted together.

For example, 13/14, 29/30, 22/23, and so on.

All ratings at TJ = 25 °C, unless otherwise specified.

CAUTION These devices are sensitive to electrostatic discharge.

Proper handling procedures must be followed.

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MSCSM120HM50T3AG Features

* The following are key features of the MSCSM120HM50T3AG device:

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

* Kelvin source for easy drive

* Very low stray inductance

* Internal thermistor for temperature monitoring

* Aluminu