MSCSM120HM50T3AG Datasheet - Microchip

MSCSM120HM50T3AG SiC MOSFET

MSCSM120HM50T3AG Full Bridge SiC MOSFET Power Module Product Overview The MSCSM120HM50T3AG device is a full bridge 1200V, 55A silicon carbide (SiC) power module. : Notes: All multiple inputs and outputs must be shorted together. For example, 13/14, 29/30, 22/23, and so on. All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc. and.

MSCSM120HM50T3AG Features

* The following are key features of the MSCSM120HM50T3AG device:

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

* Kelvin source for easy drive

* Very low stray inductance

* Internal thermistor for temperature monitoring

* Aluminu

MSCSM120HM50T3AG-Microchip.pdf