MSCSM120HRM08NG Datasheet - Microchip

MSCSM120HRM08NG T-Type SiC MOSFET Power Module

MSCSM120HRM08NG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM08NG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 317A and a dual common source 700V, 227A. The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Diagram Note: All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handli.

MSCSM120HRM08NG Features

* The MSCSM120HRM08NG device has the following features:

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

* Kelvin source for easy drive

* Low stray inductance

* M5 power connectors

* High level of integration

* Si3N4 subst

MSCSM120HRM08NG-Microchip.pdf