MSCSM120HM16T3AG Datasheet (Microchip) - Full Bridge SiC MOSFET Power Module

MSCSM120HM16T3AG, Full Bridge SiC MOSFET Power Module

MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module Product Overview : The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (SiC) power module.

: Notes: All ratings at TJ = 25 °C, unless otherwise specified.

All multiple inputs and outputs must be shorted together.

For example, 13/14 ; 29/30 ; 22/23, and so on.

CAUTION These devices are sensitive to electrostatic discharge.

Proper handling procedures must be followed.

MSCSM120HM16T3AG Features

* The following are the key features of the MSCSM120HM16T3AG device:

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

* Very low stray inductance

* Internal thermistor for temperature monitoring

* Aluminum Nitride (AlN) substrate for impro