* The following are the key features of the MSCSM120HM16T3AG device:
* SiC Power MOSFET
* Low RDS(on)
* High temperature performance
* Very low stray inductance
* Internal thermistor for temperature monitoring
* Aluminum Nitride (AlN) substrate for impro
MSCSM120HM16T3AG Datasheet (1.54 MB)
MSCSM120HM16T3AG
1.54 MB
Full bridge sic mosfet power module.
MSCSM120HM16T3AG
Full Bridge SiC MOSFET Power Module
Product Overview
:
The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (S.
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