MSCSM120HM16T3AG Datasheet - Microchip

MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module

MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module Product Overview : The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (SiC) power module. : Notes: All ratings at TJ = 25 °C, unless otherwise specified. All multiple inputs and outputs must be shorted together. For example, 13/14 ; 29/30 ; 22/23, and so on. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology In.

MSCSM120HM16T3AG Features

* The following are the key features of the MSCSM120HM16T3AG device:

* SiC Power MOSFET

* Low RDS(on)

* High temperature performance

* Very low stray inductance

* Internal thermistor for temperature monitoring

* Aluminum Nitride (AlN) substrate for impro

MSCSM120HM16T3AG Datasheet (1.54 MB)