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MSCSM120HRM052NG - T-Type SiC MOSFET Power Module

Key Features

  • The MSCSM120HRM052NG device has the following features:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • Kelvin source for easy drive.
  • Low stray inductance.
  • M5 power connectors.
  • High level of integration.
  • Si3N4 substrate for improved thermal performance Benefits The MSCSM120HRM052NG device has the following benefits:.
  • Outstanding performance at high-frequency operation.
  • Direct mounting to heats.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSCSM120HRM052NG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM052NG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 472A and a dual common source 700V, 442A. The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Diagram Note: All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2023 Microchip Technology Inc.