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MSCSM120HRM163AG - T-Type SiC MOSFET

Key Features

  • The MSCSM120HRM163AG device has the following features:.
  • SiC Power MOSFET.
  • High speed switching.
  • Low RDS(on).
  • Ultra low loss.
  • Very low stray inductance.
  • Kelvin source for easy drive.
  • AlN substrate for improved thermal performance Benefits The MSCSM120HRM163AG device has the following benefits:.
  • Outstanding performance at high-frequency operation.
  • High-power and high-efficiency rectifiers and converters.
  • Dir.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSCSM120HRM163AG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM163AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 173A and a dual common source 700V, 124A. : The following figures show the electrical and pinout location diagrams of the device. : Figure 1. Electrical Diagram Figure 2. Pinout Location Diagram Notes:  • Pins 1/2/3; 10/11/12; 5/6/7/8; 21/22/23/24 must be shorted together. • All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2023 Microchip Technology Inc.