Datasheet4U Logo Datasheet4U.com

MSCSM120HRM08NG - T-Type SiC MOSFET Power Module

Key Features

  • The MSCSM120HRM08NG device has the following features:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • Kelvin source for easy drive.
  • Low stray inductance.
  • M5 power connectors.
  • High level of integration.
  • Si3N4 substrate for improved thermal performance Benefits The MSCSM120HRM08NG device has the following benefits:.
  • Outstanding performance at high-frequency operation.
  • Direct mounting to heatsin.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSCSM120AM027CT6AG Phase Leg SiC Microsemi
MSCSM120AM03CT6LIAG Very Low Stray Inductance Phase Leg SiC MOSFET Microsemi
MSCSM120AM08CT3G Phase Leg SiC MOSFET Microsemi
MSCSM120AM50CT1AG Phase Leg SiC MOSFET Microsemi
MSCSM120TAM11CTPAG Triple Phase Leg SiC MOSFET Microsemi

Other Datasheets by Microchip Technology

Part Number Description
MSCSM120HRM052NG T-Type SiC MOSFET Power Module
MSCSM120HRM163AG T-Type SiC MOSFET
MSCSM120HRM311AG T-Type SiC MOSFET Power Module
MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module
MSCSM120HM50T3AG SiC MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MSCSM120HRM08NG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM08NG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 317A and a dual common source 700V, 227A. The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Diagram Note: All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2023 Microchip Technology Inc.