Microchip Technology MSCSM120HM16T3AG
The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (SiC) power module. For example, 13/14 ; 29/30 ; 22/23, and so on. and its subsidiaries Data Sheet DS00004613A-page 1 MSCSM120HM16T3AG Features The following are the key features of the MSCSM120HM16T3AG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • Very low stray inductance • Internal thermistor for temperature monitoring • Aluminum...FEATURES
The following are the key features of the MSCSM120HM16T3AG device:● SiC Power MOSFET – Low RDS(on) – High temperature performance
● Very low stray inductance
● Internal thermistor for temperature monitoring
● Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of the MSCSM120HM16T3AG device:
● High power and efficiency converters and inverters
● Outstanding performance at high frequency operation
● Direct mounting to heatsink (isolated package)
● Low junction-to-case thermal resistance
● Solderable terminals both for power and signal for easy PCB mounting
● Low profile
● RoHS Compliant
APPLICATIONS
The following are the applications of the MSCSM120HM16T3AG device:● Uninterruptible power supplies
● Welding converters
● Switched mode power supplies
● EV motor and traction drive © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004613A-page 2 MSCSM120HM16T3AG
ELECTRICAL SPECIFICATIONS
1.ELECTRICAL SPECIFICATIONS
This section provides the electrical specifications of the MSCSM120HM16T3AG device.