MSCSM120HM16T3AG Description
MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module Product Overview : The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (SiC) power module. All ratings at TJ = 25 °C, unless otherwise specified.
MSCSM120HM16T3AG Key Features
- SiC Power MOSFET
- Low RDS(on)
- High temperature performance
- Very low stray inductance
- Internal thermistor for temperature monitoring
- Aluminum Nitride (AlN) substrate for improved thermal performance
- High power and efficiency converters and inverters
- Outstanding performance at high frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance