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MSCSM120HM16T3AG - Full Bridge SiC MOSFET Power Module

Key Features

  • The following are the key features of the MSCSM120HM16T3AG device:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • Very low stray inductance.
  • Internal thermistor for temperature monitoring.
  • Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of the MSCSM120HM16T3AG device:.
  • High power and efficiency converters and inverters.
  • Outstanding performance at high f.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSCSM120HM16T3AG Full Bridge SiC MOSFET Power Module Product Overview : The MSCSM120HM16T3AG device is a full bridge 1200V, 173A silicon carbide (SiC) power module. : Notes:  • All ratings at TJ = 25 °C, unless otherwise specified. • All multiple inputs and outputs must be shorted together. For example, 13/14 ; 29/30 ; 22/23, and so on. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc.