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MSCSM120HM50T3AG Datasheet Sic MOSFET

Manufacturer: Microchip Technology

Overview: MSCSM120HM50T3AG Full Bridge SiC MOSFET Power Module Product Overview The MSCSM120HM50T3AG device is a full bridge 1200V, 55A silicon carbide (SiC) power module. : Notes:  • All multiple inputs and outputs must be shorted together. For example, 13/14, 29/30, 22/23, and so on. • All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc.

Key Features

  • The following are key features of the MSCSM120HM50T3AG device:.
  • SiC Power MOSFET.
  • Low RDS(on).
  • High temperature performance.
  • Kelvin source for easy drive.
  • Very low stray inductance.
  • Internal thermistor for temperature monitoring.
  • Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM120HM50T3AG device:.
  • High power and efficiency converters and inverters.
  • Ou.

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