Microchip Technology MSCSM120HRM311AG
The MSCSM120HRM311AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 89A and a dual common source 700V, 124A. and its subsidiaries Data Sheet DS00004939A-page 1 MSCSM120HRM311AG Features The MSCSM120HRM311AG device has the following features: • SiC Power MOSFET – High speed switching – Low RDS(on) – Ultra low loss • Very low stray inductance • AlN substrate for improved thermal performance Benefits The...MSCSM120HRM311AG Specifications
- Package : Module
- Drain-Source Resistance : 31mΩ
- Drain-Source Voltage : 1.2kV
Source:
Octopart
| Part No. | MSCSM120HRM311AG |
|---|---|
| Datasheet | MSCSM120HRM311AG Download |
| Manufacturer |  Microchip Technology |
| Description | T-Type SiC MOSFET Power Module |
| Buy | Stock & Price |
FEATURES
The MSCSM120HRM311AG device has the following features:● SiC Power MOSFET – High speed switching – Low RDS(on) – Ultra low loss
● Very low stray inductance
● AlN substrate for improved thermal performance Benefits The MSCSM120HRM311AG device has the following benefits:
● Outstanding performance at high-frequency operation
● High-power and high-efficiency rectifiers and converters
● Direct mounting to heatsink (isolated package)
● Low junction-to-case thermal resistance
● Solderable terminals both for power and signal for easy PCB mounting
● Low profile
● RoHS compliant
APPLICATIONS
The MSCSM120HRM311AG device has the following applications:● Solar inverter
● Three level inverter
● Uninterruptible power supplies © 2023 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004939A-page 2 MSCSM120HRM311AG
ELECTRICAL SPECIFICATIONS
1.ELECTRICAL SPECIFICATIONS
The following sections describe the electrical specifications of the MSCSM120HRM311AG device. 1.1 Q1 and Q4 1200...
