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MSCSM120HRM311AG - T-Type SiC MOSFET Power Module

Key Features

  • The MSCSM120HRM311AG device has the following features:.
  • SiC Power MOSFET.
  • High speed switching.
  • Low RDS(on).
  • Ultra low loss.
  • Very low stray inductance.
  • AlN substrate for improved thermal performance Benefits The MSCSM120HRM311AG device has the following benefits:.
  • Outstanding performance at high-frequency operation.
  • High-power and high-efficiency rectifiers and converters.
  • Direct mounting to heatsink (isolated pack.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSCSM120HRM311AG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM311AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 89A and a dual common source 700V, 124A. : : The following figures show the electrical and pinout location diagrams of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Diagram Note:  • Pins 4/5; 7/8; 10/11 must be shorted together. • All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2023 Microchip Technology Inc.