MSCSM120HRM311AG Overview
MSCSM120HRM311AG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM311AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 89A and a dual mon source 700V, 124A. The following figures show the electrical and pinout location diagrams of the device. Electrical Diagram Figure.
MSCSM120HRM311AG Key Features
- SiC Power MOSFET
- High speed switching
- Low RDS(on)
- Ultra low loss
- Very low stray inductance
- AlN substrate for improved thermal performance
- Outstanding performance at high-frequency operation
- High-power and high-efficiency rectifiers and converters
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance