MSCSM120HRM311AG Datasheet (Microchip) - T-Type SiC MOSFET Power Module

MSCSM120HRM311AG, T-Type SiC MOSFET Power Module

MSCSM120HRM311AG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM311AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg 1200V, 89A and a dual common source 700V, 124A.

: : The following figures show the electrical and pinout location diagrams of the device.

Figure 1.

Electrical Diagram Figure 2.

Pinout Location Diagram Note: Pins 4/5; 7/8; 10/11 must be shorted together.

All ratings at TJ = 25 °C, unless otherwise specified.

MSCSM120HRM311AG Features

* The MSCSM120HRM311AG device has the following features:

* SiC Power MOSFET

* High speed switching

* Low RDS(on)

* Ultra low loss

* Very low stray inductance

* AlN substrate for improved thermal performance Benefits The MSCSM120HRM311AG device has the f