MT28F400B3

FLASH MEMORY

Micron Technology

MT28F400B3 Features

* Seven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

* Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1

* Compatible with 0.3µm S

MT28F400B3 General Description

The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while al.

MT28F400B3 Datasheet (779.06 KB)

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MT28F400B3

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Micron Technology

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779.06 KB

Description:

Flash memory.

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MT28F400B3 FLASH MEMORY Micron Technology

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MT28F400B3 Features

MT28F400B3 General Description

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