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MT47H256M4 - DDR2 SDRAM

Micron Technology

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Datasheet Details

Part number	MT47H256M4
Manufacturer	Micron Technology
File Size	9.35 MB
Description	DDR2 SDRAM
Datasheet	MT47H256M4_MicronTechnology.pdf

MT47H256M4 Product details

Features

Features.
VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V.
JEDEC-standard 1.8V I/O (SSTL_18-compatible).
Differential data strobe (DQS, DQS#) option.
4n-bit prefetch architecture.
Duplicate output strobe (RDQS) option for x8.
DLL to align DQ and DQS transitions with CK.
8 internal banks for concurrent operation.
Programmable CAS latency (CL).
Posted CAS additive latency (AL).
WRITE latency = READ latency - 1 tCK.

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Published: Sep 7, 2007 |