* Features
* VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
* JEDEC-standard 1.8V I/O (SSTL_18-compatible)
* Differential data strobe (DQS, DQS#) option
* 4n-bit prefetch architecture
* Duplicate output strobe (RDQS) option for x8
* DLL to align DQ and DQS transit
MT47H64M16 Datasheet (9.35 MB)
MT47H64M16
Micron Technology
9.35 MB
Ddr2 sdram.
DDR2 SDRAM
MT47H256M4
* 32 Meg x 4 x 8 banks MT47H128M8
* 16 Meg x 8 x 8 banks MT47H64M16
* 8 Meg x 16 x 8 banks
1Gb: x4, x8,.
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