MT4LC4M16N3, MT4LC4M16R6 DRAM

Micron Technology

Description

4 MEG x 16 EDO DRAM DRAM .
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.

📥 Download Datasheet

MT4LC4M16N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT4LC4M16N3, MT4LC4M16R6. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MT4LC4M16N3, MT4LC4M16R6
Manufacturer: Micron Technology
File Size: 474.53 KB
Datasheet: MT4LC4M16R6_MicronTechnology.pdf
Description: DRAM
Note: This datasheet PDF includes multiple part numbers: MT4LC4M16N3, MT4LC4M16R6.
Please refer to the document for exact specifications by model.

Features

* Single +3.3V ±0.3V power supply
* Industry-standard x16 pinout, timing, functions, and package
* 12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3)
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTL-compatib

MT4LC4M16N3 Distributors

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MT4LC4M16R6 DRAM Micron Technology

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