MT4LC4M16R6 DRAM

Micron Technology

Description

4 MEG x 16 EDO DRAM DRAM .
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.

📥 Download Datasheet

MT4LC4M16R6 Datasheet Preview — Preview of MT4LC4M16R6 PDF

Datasheet Specifications

Part number: MT4LC4M16R6
Manufacturer: Micron Technology
File Size: 474.53 KB
Datasheet: MT4LC4M16R6_MicronTechnology.pdf
Description: DRAM

Features

* Single +3.3V ±0.3V power supply
* Industry-standard x16 pinout, timing, functions, and package
* 12 row, 10 column addresses (R6) 13 row, 9 column addresses (N3)
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTL-compatib

MT4LC4M16R6 Distributors

📁 Related Datasheet

MT4LC1M16C3 MT4LS12832 MT4LSDT1664A MT4LSDT1664H MT4LSDT1664LH MT4LSDT464A

📌 All Tags

MT4LC4M16R6 DRAM Micron Technology

Micron Technology MT4LC4M16R6-like datasheet