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MT54W4MH8B SRAM 2-WORD BURST

MT54W4MH8B Description

ADVANCE‡ www.DataSheet4U.com 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 36Mb QDR™II SRAM 2-WORD BURST .
4 Meg x 8, QDRIIb2 FBGA 4 Meg x 9, QDRIIb2 FBGA 2 Meg x 18, QDRIIb2 FBGA 1 Meg x 36, QDRIIb2 FBGA OPTIONS. Clock Cycle Timing 4ns (250 MHz).

MT54W4MH8B Features

* DLL circuitry for accurate output data placement MT54W4MH8B MT54W4MH9B MT54W2MH18B MT54W1MH36B Figure 1 165-Ball FBGA
* Separate independent read and write data ports with concurrent transactions
* 100 percent bus utilization DDR READ and WRITE operation
* Fast cl

MT54W4MH8B Applications

* that benefit from a high-speed, fully-utilized DDR data bus. Please refer to Micron’s Web site (www. micron. com/ sramds) for the latest data sheet. READ/WRITE OPERATIONS All bus transactions operate on an uninterruptable burst of two data, requiring one full clock cycle of bus utilization. The resul

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Datasheet Details

Part number
MT54W4MH8B
Manufacturer
Micron Technology
File Size
567.42 KB
Datasheet
MT54W4MH8B_MicronTechnology.pdf
Description
SRAM 2-WORD BURST

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SRAM 2-WORD BURST Micron Technology
Micron Technology MT54W4MH8B-like datasheet