2N3055 Datasheet - Microsemi Corporation

2N3055 - NPN POWER SILICON TRANSISTOR

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/407 Devices 2N3055 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC Value 70 100 7.0 7.0 15 6.0 117 -65 to +200 Max. 1.5 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Temperature Range THERMAL C.

2N3055_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

2N3055

Manufacturer:

Microsemi ↗ Corporation

File Size:

57.53 KB

Description:

Npn power silicon transistor.

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2N3055 NPN POWER SILICON TRANSISTOR Microsemi Corporation