2N7372 Datasheet - Microsemi Corporation

2N7372 Complimentary Power Transistors

These power transistors are produced by PPC's MULTIPLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. These devices have excellent unclamped.

2N7372 Features

* Planar Process for Reliability Fast Switching High-Frequency Power Transistors For Complementary Use with Each Other 15 mj Reverse Energy Rating with IC = 10MA and 4 V Reverse Bias Similar to 2N5004 and 2N5005 but JEDE

2N7372_MicrosemiCorporation.pdf