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2N7370 Datasheet - Microsemi

2N7370 NPN DARLINGTON HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices 2N7370 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 0.667 W/0C above TC > +250C Symbol VCEO VCBO V.

2N7370-Microsemi.pdf

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Datasheet Details

Part number:

2N7370

Manufacturer:

Microsemi ↗

File Size:

50.49 KB

Description:

Npn darlington high power silicon transistor.

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