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2N7371 Datasheet - Microsemi Corporation

2N7371 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/623 Devices 2N7371 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC Value 100 100 5.0 0.2 12 100 -65 to +175 Max. 1.5 Units Vdc Vdc Vdc Adc Adc W 0 www.DataS.

2N7371_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

2N7371

Manufacturer:

Microsemi ↗ Corporation

File Size:

75.23 KB

Description:

Pnp darlington high power silicon transistor.

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2N7371 2N7371 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR Microsemi Corporation

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