* Fast switching with low EMI
* Very Low Eoff for maximum efficiency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI
* RoHS compliant TYPICAL APPLICATIONS
APT28GA60BD15 Datasheet (265.32 KB)
APT28GA60BD15
Microsemi ↗ Corporation
265.32 KB
High speed pt igbt.
APT28GA60BD15 APT28GA60SD15
600V High Speed PT IGBT
®
(B)
D3PAK
TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved .
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