* Fast switching with low EMI
* Very Low Eoff for maximum efficiency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI
* RoHS compliant TYPICAL APPLICATIONS
APT28GA60K Datasheet (227.85 KB)
APT28GA60K
Microsemi ↗ Corporation
227.85 KB
High speed pt igbt.
APT28GA60K
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon.
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