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APT28GA60K Datasheet - Microsemi Corporation

APT28GA60K High Speed PT IGBT

APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short www.DataSheet4U.net delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the p.

APT28GA60K Features

* Fast switching with low EMI

* Very Low Eoff for maximum efficiency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS

APT28GA60K Datasheet (227.85 KB)

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Datasheet Details

Part number:

APT28GA60K

Manufacturer:

Microsemi ↗ Corporation

File Size:

227.85 KB

Description:

High speed pt igbt.

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APT28GA60K High Speed IGBT Microsemi Corporation

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