APT28GA60K Datasheet - Microsemi Corporation

APT28GA60K High Speed PT IGBT

APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short www.DataSheet4U.net delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the p.

APT28GA60K Features

* Fast switching with low EMI

* Very Low Eoff for maximum efﬁciency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS

APT28GA60K_MicrosemiCorporation.pdf