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MRF951

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF951 Features

* Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure

* 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package

* Macro X DESCRIPTION: Designed for use in high gain

MRF951 General Description

Designed for use in high gain, low noise small-signal amplifiers. DataSheet4U.com ee DataSh ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA T.

MRF951 Datasheet (302.51 KB)

Preview of MRF951 PDF

Datasheet Details

Part number:

MRF951

Manufacturer:

Microsemi ↗ Corporation

File Size:

302.51 KB

Description:

Rf & microwave discrete low power transistors.
www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW P.

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MRF951 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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