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MRF904

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF904 Features

* Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2

* High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2. Base 3. Collecto

MRF904 General Description

Designed primarily for use IN High Gain, low noise general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 25 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D.

MRF904 Datasheet (100.94 KB)

Preview of MRF904 PDF

Datasheet Details

Part number:

MRF904

Manufacturer:

Microsemi ↗ Corporation

File Size:

100.94 KB

Description:

Rf & microwave discrete low power transistors.
www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF904 RF & MICROWAVE DISCRETE LOW P.

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MRF904 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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