* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB Gain DESCRIPTION: The M
MS2211
Microsemi ↗ Corporation
289.87 KB
Rf & microwave transistors avionics applications.
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MS2211
RF & MICROWAVE TRANSISTORS AV.
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