* GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics ap
MS2214
Advanced Power Technology
370.38 KB
Rf & microwave transistors avionics applications.
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MS2214
RF & MICROWAVE TRANSISTORS AV.
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