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MS2213

RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS

MS2213 Features

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB Gain DESCRIPTION: Th

MS2213 General Description

The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low .

MS2213 Datasheet (297.12 KB)

Preview of MS2213 PDF

Datasheet Details

Part number:

MS2213

Manufacturer:

Microsemi ↗ Corporation

File Size:

297.12 KB

Description:

Rf & microwave transistors speciality avionics/jtids applications.
www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2213 RF & MICROWAVE TRANSISTORS S.

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TAGS

MS2213 MICROWAVE TRANSISTORS SPECIALITY AVIONICS JTIDS APPLICATIONS Microsemi Corporation

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