2N5671 Datasheet - Microsemi

2N5671 NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC www.DataSheet.net/ 2N5671 90 120 2N5672 120 150 Unit Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature .

2N5671_Microsemi.pdf