2N5679
Seme LAB
20.29kb
Pnp silicon transistors. The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use as drivers for high po
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2N5670 - SILICON N-CHANNEL JUNCTION FET
(ETC)
2N5668 (SILICON) 2N5669 2N5670
SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS
Depletion Mode (TypeA) Junction Field-EffectTransistors designed f.
2N5670 - N-CHANNEL JFET
(New Jersey Semi-Conductor)
.
2N5670 - VHF AMPLIFIER JFET
(Motorola)
2N5668 2N5669 2N5670
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
VHF AMPLIFIER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-.
2N5670 - n-channel JFET
(Siliconix)
n-channel JFETs
designed for • • •
• VHF/UHF Amplifiers • Mixers • Oscillators
H
Performance Curves NH See Section 4
BENEFITS
• Low Cost • Automatic .
2N5671 - NPN High Power Silicon Transistor
(VPT)
2N5671 & 2N5672
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488
• TO-3 (TO-204AA) Package.
2N5671 - Silicon NPN Power Transistors
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2N5671 2N5672
DESCRIPTION ·With TO-3 package ·High .
2N5671 - NPN HIGH POWER SILICON TRANSISTOR
(Microsemi)
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488 Devices 2N5671 2N5672 Qualified Level JAN JANTX JANTXV
MAXIMUM RATIN.
2N5671 - Bipolar NPN Device
(Seme LAB)
2N5671
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
2N5672 - NPN High Power Silicon Transistor
(VPT)
2N5671 & 2N5672
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/488
• TO-3 (TO-204AA) Package.
2N5672 - SILICON HIGH POWER NPN TRANSISTOR
(TT)
SILICON HIGH POWER NPN TRANSISTOR
2N5672
• High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Scree.
