2N5670, 2N5668 Datasheet - ETC

2N5670 - SILICON N-CHANNEL JUNCTION FET

2N5668 (SILICON) 2N5669 2N5670 SILICON N CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications. Low Cross Modulation and Intermodulation Distortion Drain and Source Interchangeable Low 100-MHz Noise Figure - NF = 2.5 dB (Max) Low Reverse Transfer and Input Capcitances- Crss = 1.0 pF (Typ); Ciss =4.7 pF (Typ) High Maximum Stable Gain Due to Drain.

2N5668-ETC.pdf